Title :
Structure dependent modulation responses in quantum-well lasers
Author :
Tessler, Nir ; Nagar, Ron ; Eisenstein, Gadi
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
10/1/1992 12:00:00 AM
Abstract :
The authors present a three-level rate equation model, describing structurally dependent modulation bandwidth limitations in quantum-well lasers. They demonstrate an enhanced damping as well as a capacitivelike rolloff in the modulation response due to the transport time and carrier injection bottleneck. They also show that, for relatively short transport times, the dominant effect is that of damping, and they calculate an approximated explicit expression for a structure-dependent nonlinear gain compression coefficient
Keywords :
laser theory; optical modulation; semiconductor device models; semiconductor lasers; capacitivelike rolloff; carrier injection bottleneck; diode lasers; enhanced damping; modulation response; quantum-well lasers; short transport times; structurally dependent modulation bandwidth limitations; structure-dependent nonlinear gain compression coefficient; three-level rate equation model; transport time; Ballistic transport; Bandwidth; Carrier confinement; Damping; Equations; Neck; Quantum mechanics; Quantum well lasers; Temperature; Wave functions;
Journal_Title :
Quantum Electronics, IEEE Journal of