Far-infrared light generation at semiconductor surfaces and its spectroscopic applications

Author

Greene, B.I. ; Saeta, P.N. ; Dykaar, Douglas R. ; Schmitt-Rink, S. ; Chuang, Shun Lien

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2302

Lastpage

2312

Abstract

Femtosecond pulses of far-infrared (FIR) radiation can be generated in the depletion field near semiconductor surfaces under optical excitation via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This coherent mechanism differs from previously proposed incoherent mechanisms and is expected to dominate for nonresonant excitation as well as for resonant excitation with optical fields. Two femtosecond time-resolved spectroscopic applications using a visible excitation pulse and a FIR probe pulse are described

Keywords

high-speed optical techniques; spectroscopic light sources; stimulated emission; time resolved spectroscopy; FIR light generation; FIR probe pulse; coherent mechanism; depletion field; electric-field-induced optical rectification; far-infrared; femtosecond pulse generation; femtosecond time-resolved spectroscopic applications; fs pulses; inverse Franz-Keldysh effect; nonresonant excitation; optical excitation; optical fields; resonant excitation; semiconductor surfaces; visible excitation pulse; Finite impulse response filter; Nonlinear optics; Optical pulse generation; Optical pulses; Optical pumping; Probes; Semiconductor lasers; Spectroscopy; Surges; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159537

Filename

159537