CMOS Hardness Prediction for Low-Dose-Rate Environments

Exposure of MOS devices to different dose-rate ionizing radiation environments indicates an apparent dependence of radiation charging upon the dose rate. It is shown in this paper that over a wide range of dose rates there is no true dose rate dependence and that the differences in radiation charging can be attributed to annealing effects. It is shown that convolution integrals and linear system theory accurately predict charging behavior and that the impulse response of the system can accurately be predicted for very long times since the annealing phenomenon is temperature activated.