Title :
Optoelectronic transient characterization of ultrafast devices
Author :
Frankel, Michael Y. ; Whitaker, John F. ; Mourou, Gerard A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
Recent advances in state-of-the-art optoelectronic techniques applied to areas pertinent to transistor small-signal and large-signal characterization are discussed. The aspects of optoelectronic techniques for electrical signal measurement, generation, and transmission are studied. On the basis of these results, a large-signal digital-switching transistor characterization methodology is developed. This methodology is used to estimate the parameters of a high-electron-mobility transistor and to obtain the large-signal characteristics of this device on a picosecond time scale. The measurements are compared to a SPICE-based time-domain model. The time-domain measurement technique is extended to obtain two-port frequency-domain characteristics of another, similar transistor with a 100-GHz bandwidth. These results compare favorably to conventional HP8510 network analyzer measurements over a common frequency span of 40 GHz
Keywords :
S-parameters; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; transients; 100 GHz; common frequency span; electrical signal generation; electrical signal measurement; high-electron-mobility transistor; large-signal characterization; large-signal digital-switching transistor characterization; picosecond time scale; state-of-the-art optoelectronic techniques; time-domain measurement technique; transient characterization; transistor small-signal characterization; two-port frequency-domain characteristics; ultrafast devices; Bandwidth; Electric variables measurement; Frequency domain analysis; HEMTs; MODFETs; Measurement techniques; Parameter estimation; Signal generators; Time domain analysis; Transistors;
Journal_Title :
Quantum Electronics, IEEE Journal of
