DocumentCode :
83150
Title :
A Popularity-Aware Buffer Management to Improve Buffer Hit Ratio and Write Sequentiality for Solid-State Drive
Author :
Qingsong Wei ; Lingfang Zeng ; Jianxi Chen ; Cheng Chen
Author_Institution :
Data Storage Inst., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume :
49
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
2786
Lastpage :
2793
Abstract :
Random writes significantly limit the application of flash memory in enterprise environment due to its poor latency, shorten lifetime and high garbage collection overhead. Solid-state drive (SSD) uses a small part of memory as buffer to reduce random write and extend lifetime. Existing block-based buffer management schemes exploit spatial locality to improve the write sequentiality at a cost of low buffer hit ratio. In this paper, we propose a novel buffer management scheme referred to as PAB, which adopts both buffer hit ratio and write sequentiality as design objectives. Leveraging block popularity, PAB makes full use of both temporal and spatial localities at block level. When replacement happens, PAB selects victim block based on block popularity, page counter and block dirty flag. As universal buffer, PAB serves both read and write requests to increase the possibility to form sequential write. PAB has been extensively evaluated under real enterprise workloads. Our benchmark results conclusively demonstrate that PAB can achieve up to 72% performance improvement and 308% block erasure reduction compared to existing buffer management schemes.
Keywords :
buffer storage; flash memories; PAB management; SSD; block dirty flag; block erasure reduction; block level; block popularity; buffer hit ratio; flash memory; lifetime; memory buffer; page counter; performance improvement; popularity-aware buffer management; random writes; read request; real enterprise environment; solid-state drive; spatial locality; temporal locality; universal buffer; write request; write sequentiality; Block popularity; buffer management; cache hit ratio; solid-state drive (SSD); write sequentiality;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2013.2249579
Filename :
6522254
Link To Document :
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