Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells

Author

Fu, Winston S. ; Harris, James S., Jr. ; Binder, Rolf ; Koch, Stephen W. ; Klem, John F. ; Olbright, Greg R.

Author_Institution

Solid State Electron. Lab., Stanford Univ., CA, USA

Volume

28

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2404

Lastpage

2415

Abstract

Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; nonlinear optics; optical saturable absorption; semiconductor quantum wells; spectral line shift; CW optical nonlinearities; GaAs-AlAs; GaAs-AlAs type-II quantum wells; III-V semiconductor; MQW; absorption saturation; applied static longitudinal dielectric field; bleaching; blue shift; electron hole spatial separation; electron redistribution; even gain; femtosecond nonlinearities; heavy-hole exciton resonance; nonlinear optical properties; photoluminescence; ultrafast response; ultrahigh excitation conditions; Charge carrier processes; Electron optics; Gallium arsenide; Laser theory; Nonlinear optics; Optical devices; Optical superlattices; Quantum well lasers; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.159547

Filename

159547