Radiation-Hardened Performance-Optimized I2L LSI

Experimental data and theoretical calculations are presented on the effects of neutron irradiation on I2L circuits. It is shown that neutron-induced degradation of I2L gate performance can be theoretically predicted with reasonable accuracy. Operation of custom designed I2L 32-bit serial shift registers to a neutron fluence level of 1 × 1014n/cm2 is demonstrated. Shift register data are also given from total dose gamma and transient upset radiation experiments with thresholds exceeding 3 × 106rads(Si) and 2 × 109rads(Si)/s, respectively.