DocumentCode :
831664
Title :
Methods for Radiation Testing Random Access Memories and LSI Circuits
Author :
Nelson, G.P. ; King, E.E.
Author_Institution :
Naval Research Laboratory Washington D. C. 20375
Volume :
24
Issue :
6
fYear :
1977
Firstpage :
2341
Lastpage :
2346
Abstract :
The background to many of the current industry approaches to electrical testing of LSI devices is presented along with modifications to obtain the radiation responses of the devices. The results of several experiments conducted on CMOS RAMs using these approaches are presented. Although the CMOS technology was used in the experimental work, the basic technique is applicable to other technologies.
Keywords :
CMOS technology; Capacitance measurement; Circuit testing; Current measurement; Large scale integration; Manufacturing; Radiation effects; Random access memory; Space technology; System testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1977.4329218
Filename :
4329218
Link To Document :
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