• DocumentCode
    831664
  • Title

    Methods for Radiation Testing Random Access Memories and LSI Circuits

  • Author

    Nelson, G.P. ; King, E.E.

  • Author_Institution
    Naval Research Laboratory Washington D. C. 20375
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • Firstpage
    2341
  • Lastpage
    2346
  • Abstract
    The background to many of the current industry approaches to electrical testing of LSI devices is presented along with modifications to obtain the radiation responses of the devices. The results of several experiments conducted on CMOS RAMs using these approaches are presented. Although the CMOS technology was used in the experimental work, the basic technique is applicable to other technologies.
  • Keywords
    CMOS technology; Capacitance measurement; Circuit testing; Current measurement; Large scale integration; Manufacturing; Radiation effects; Random access memory; Space technology; System testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1977.4329218
  • Filename
    4329218