DocumentCode
831664
Title
Methods for Radiation Testing Random Access Memories and LSI Circuits
Author
Nelson, G.P. ; King, E.E.
Author_Institution
Naval Research Laboratory Washington D. C. 20375
Volume
24
Issue
6
fYear
1977
Firstpage
2341
Lastpage
2346
Abstract
The background to many of the current industry approaches to electrical testing of LSI devices is presented along with modifications to obtain the radiation responses of the devices. The results of several experiments conducted on CMOS RAMs using these approaches are presented. Although the CMOS technology was used in the experimental work, the basic technique is applicable to other technologies.
Keywords
CMOS technology; Capacitance measurement; Circuit testing; Current measurement; Large scale integration; Manufacturing; Radiation effects; Random access memory; Space technology; System testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1977.4329218
Filename
4329218
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