DocumentCode
831710
Title
Extensions of Models for Transistor Failure Probability Due to Neutron Fluence
Author
Michalowicz, Joseph V. ; Ausman, George A., Jr.
Author_Institution
Harry Diamond Laboratories Adelphi, Maryland 20783
Volume
24
Issue
6
fYear
1977
Firstpage
2365
Lastpage
2370
Abstract
Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.
Keywords
Bipolar transistors; Circuit optimization; Data models; Monte Carlo methods; Neutrons; Performance analysis; Predictive models; Probability distribution; Random variables; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1977.4329223
Filename
4329223
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