• DocumentCode
    832033
  • Title

    Emerging research logic devices

  • Author

    Zhirnov, Victor V. ; Hutchby, James A. ; Bourianoff, George I. ; Brewer, Joe E.

  • Author_Institution
    Semicond. Res. Corp., Durham, NC, USA
  • Volume
    21
  • Issue
    3
  • fYear
    2005
  • Firstpage
    37
  • Lastpage
    46
  • Abstract
    Presents an an assessment of new field-effect transistor, resonant tunnel device, single-electron transistor and quantum cellular automata technologies. The goal of this article is to provide technical assessments of new logic technologies. We attempt to "cast a broad net" to gather in one place alternative concepts for logic that would, if successful, substantially extend the International Technology Roadmap for Semiconductors (ITRS) beyond CMOS. The discussions provide some detail regarding device operation principles, advantages, challenges, maturity, and current and projected performance. The scaling of CMOS device and process technology, as it is known today, is projected to continue (7-nm physical channel length) by 2019. The grand challenge, then, is to invent and develop one or more new technologies that will extend the scaling of information-processing technologies through multiple generations beyond 2019. Such new technologies must meet certain fundamental requirements and possess certain compelling attributes to justify the very substantial investments that are necessary to build a new infrastructure.
  • Keywords
    cellular automata; integrated circuit technology; integrated logic circuits; resonant tunnelling devices; single electron transistors; superconducting logic circuits; CMOS device; FET; device operation; information-processing technologies; logic devices; process technology; quantum cellular automata; rapid single-flux quantum logic; resonant tunnel devices; single-electron transistors; spin transistor; Automatic control; Capacitance; FETs; Integrated circuit interconnections; Logic devices; Quantum cellular automata; Shape control; Switches; Switching circuits; Throughput;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.2005.1438811
  • Filename
    1438811