Title :
S-band erbium-doped silica fibre amplifier with flattened-gain of over 21 dB
Author :
Ono, H. ; Yamada, M. ; Shimizu, M.
Author_Institution :
NTT Photonics Labs., NTT Corp. Morinosato, Atsugi, Japan
fDate :
9/12/2002 12:00:00 AM
Abstract :
A gain-flattened erbium-doped silica fibre amplifier (EDSFA) has been developed for amplifying WDM signals in the S-band. The EDSFA exhibits a signal gain of over 21 dB, a gain excursion of less than 1.9 dB, and a noise figure of less than 6.7 dB in the 1491-1518 nm wavelength range
Keywords :
erbium; laser transitions; optical communication equipment; optical fibre amplifiers; silicon compounds; wavelength division multiplexing; 1491 to 1518 nm; 21 dB; 6.7 dB; EDFA; Er-doped silica fibre amplifier; S-band WDM signals; SiO2:Er; gain-flattened fibre amplifier; multi-stage configuration; wavelength division multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020776
