• DocumentCode
    832595
  • Title

    S-band erbium-doped silica fibre amplifier with flattened-gain of over 21 dB

  • Author

    Ono, H. ; Yamada, M. ; Shimizu, M.

  • Author_Institution
    NTT Photonics Labs., NTT Corp. Morinosato, Atsugi, Japan
  • Volume
    38
  • Issue
    19
  • fYear
    2002
  • fDate
    9/12/2002 12:00:00 AM
  • Firstpage
    1084
  • Lastpage
    1086
  • Abstract
    A gain-flattened erbium-doped silica fibre amplifier (EDSFA) has been developed for amplifying WDM signals in the S-band. The EDSFA exhibits a signal gain of over 21 dB, a gain excursion of less than 1.9 dB, and a noise figure of less than 6.7 dB in the 1491-1518 nm wavelength range
  • Keywords
    erbium; laser transitions; optical communication equipment; optical fibre amplifiers; silicon compounds; wavelength division multiplexing; 1491 to 1518 nm; 21 dB; 6.7 dB; EDFA; Er-doped silica fibre amplifier; S-band WDM signals; SiO2:Er; gain-flattened fibre amplifier; multi-stage configuration; wavelength division multiplexing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020776
  • Filename
    1038603