DocumentCode
832655
Title
Gain and noise characteristics of a 1.5 mu m near-travelling-wave semiconductor laser amplifier
Author
Simon, J.-C. ; Doussiere, P. ; Pophillat, L. ; Fernier, B.
Author_Institution
CNET/LAB, Lannion, France
Volume
25
Issue
7
fYear
1989
fDate
3/30/1989 12:00:00 AM
Firstpage
434
Lastpage
436
Abstract
The spectral dependence of the gain and noise characteristics of a gas source molecular beam epitaxy (GSMBE)-grown BH-GaInAsP near-travelling-wave semiconductor laser amplifier are presented, from which an indication of nonresonant internal losses is given. An intrinsic noise figure of 6 dB at an internal gain of 28 dB is obtained.
Keywords
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; 1.5 micron; 28 dB; 6 dB; GSMBE; GaInAsP laser; MBE; buried heterostructure; gain; gas source molecular beam epitaxy; internal gain; intrinsic noise figure; near-travelling-wave semiconductor laser amplifier; noise characteristics; nonresonant internal losses; spectral dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890298
Filename
18496
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