• DocumentCode
    832683
  • Title

    Bias dependence of low-frequency gate current noise in GaAs MESFETs

  • Author

    Peransin, J.M. ; Rigaud, D.

  • Author_Institution
    Univ. des Sci. et Technol. du Languedoc, Montpellier, France
  • Volume
    25
  • Issue
    7
  • fYear
    1989
  • fDate
    3/30/1989 12:00:00 AM
  • Firstpage
    439
  • Lastpage
    440
  • Abstract
    The spectra of gate current noise are investigated in GaAs MESFETs between 102 and 104 Hz. A change in the white-noise behaviour is observed with the increase of the gate current. It is shown that the contribution of an ideal Schottky shot noise is associated with two thermal noise components. The thermal noise sources originate in different leakage conductances.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; 1/f noise; 100 to 10000 Hz; GaAs; MESFETs; bias dependence; gate current dependence; ideal Schottky shot noise; leakage conductances; low-frequency gate current noise; models; semiconductors; spectra of gate current noise; thermal noise components; thermal noise sources; white-noise behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890301
  • Filename
    18499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=832683