• DocumentCode
    832728
  • Title

    25 to 300°C ultra-low-power voltage reference compatible with standard SOI CMOS process

  • Author

    Adriaensen, S. ; Dessard, V. ; Flandre, D.

  • Author_Institution
    Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • Volume
    38
  • Issue
    19
  • fYear
    2002
  • fDate
    9/12/2002 12:00:00 AM
  • Firstpage
    1103
  • Lastpage
    1104
  • Abstract
    A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25°C up to 50 nA at 300°C) and good voltage stability (about 200 ppm/°C) over the whole temperature range
  • Keywords
    CMOS analogue integrated circuits; circuit stability; low-power electronics; reference circuits; silicon-on-insulator; 1 pA to 50 nA; 25 to 300 C; analogue circuits; multi-threshold voltages; standard SOI CMOS process compatibility; ultra-low-power voltage reference; very low power consumption; voltage stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020768
  • Filename
    1038616