Title :
25 to 300°C ultra-low-power voltage reference compatible with standard SOI CMOS process
Author :
Adriaensen, S. ; Dessard, V. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fDate :
9/12/2002 12:00:00 AM
Abstract :
A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25°C up to 50 nA at 300°C) and good voltage stability (about 200 ppm/°C) over the whole temperature range
Keywords :
CMOS analogue integrated circuits; circuit stability; low-power electronics; reference circuits; silicon-on-insulator; 1 pA to 50 nA; 25 to 300 C; analogue circuits; multi-threshold voltages; standard SOI CMOS process compatibility; ultra-low-power voltage reference; very low power consumption; voltage stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020768
