Title :
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
Author :
Kovsh, A.R. ; Maleev, N.A. ; Zhukov, A.E. ; Mikhrin, S.S. ; Vasil´ev, A.P. ; Shemyakov, Yu.M. ; Maximov, M.V. ; Livshits, D.A. ; Ustinov, V.M. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fDate :
9/12/2002 12:00:00 AM
Abstract :
Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 μm. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 μm, threshold current density of 147 A/cm2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 1.28 micron; 1.3 micron; 88 percent; InAs-InGaAs-GaAs; InAs/InGaAs/GaAs quantum dot lasers; characteristic temperature; emission wavelength; high differential efficiency; multiple layers; optical gain enhancement; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020793
