Title :
Crystal Growth and Chemical Preferential Etching in Fabrication of Epitaxial Silicon Detectors
Author :
Osada, S. ; Htusimi, K. ; Fuchi, Y. ; Ohkawa, S. ; Takiguchi, R. ; Kim, C.
Author_Institution :
Faculty of Education, Yamanashi University, Kofu, Japan
Keywords :
Chemicals; Conductivity; Epitaxial layers; Etching; Fabrication; Gas detectors; Impurities; Nuclear electronics; Silicon; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329334
