Title :
Noise parameters for design of MMIC HEMT LNA
Author :
Pyndiah, R. ; Deswarte, A. ; Wolny, M. ; Meunier, J.C. ; Chambery, P.
Author_Institution :
Lab. d´´Electron. et de Phys. Appliquee Limeil-Brevannes, France
fDate :
3/30/1989 12:00:00 AM
Abstract :
The letter gives the noise parameters of MOVPE HEMTs or the design of MMIC HEMT low-noise amplifiers. An example of the design of an HEMT LNA is given using these parameters. The MMIC LNA has been fabricated and exhibits a 2.3+or-0.2 dB noise figure with an associated gain of 12+or-2 dB in the 12-16 GHz frequency range. The measured performance is within 0.5 dB of the simulation.<>
Keywords :
MMIC; electron device noise; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; vapour phase epitaxial growth; 11.8 to 12.2 dB; 12 to 16 GHz; 2.1 to 2.5 dB; HEMT MMIC; MMIC HEMT LNA; MOVPE; SHF; design; frequency range; gain; low-noise amplifiers; measured performance; noise figure; noise parameters; simulation; Epitaxial growth; FET integrated circuits; MMICs; MODFETs; Microwave amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890303
