DocumentCode
832817
Title
Charge Multiplication in Silicon Radiation Detectors under Dense Irradiation
Author
Heijne, H.M. ; Belcarz, E. ; Muller, J.C. ; Siffert, P.
Author_Institution
CERN, European Organization for Nuclear Research, Geneva, Switzerland
Volume
25
Issue
1
fYear
1978
Firstpage
378
Lastpage
384
Abstract
Charge multiplication at low field has been studied by fission fragments spectroscopy in ion-implanted Si-detectors. Also, various types of Si-detectors were used at CERN to measure a pulsed muon flux of high density, and again multiplication was observed above a flux threshold which depends on the detector design. In the absence of the gold contact no multiplication occurs.
Keywords
Annealing; Breakdown voltage; Diodes; Gold; Implants; Mesons; Pulse measurements; Silicon radiation detectors; Spectroscopy; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1978.4329335
Filename
4329335
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