Title :
Charge Multiplication in Silicon Radiation Detectors under Dense Irradiation
Author :
Heijne, H.M. ; Belcarz, E. ; Muller, J.C. ; Siffert, P.
Author_Institution :
CERN, European Organization for Nuclear Research, Geneva, Switzerland
Abstract :
Charge multiplication at low field has been studied by fission fragments spectroscopy in ion-implanted Si-detectors. Also, various types of Si-detectors were used at CERN to measure a pulsed muon flux of high density, and again multiplication was observed above a flux threshold which depends on the detector design. In the absence of the gold contact no multiplication occurs.
Keywords :
Annealing; Breakdown voltage; Diodes; Gold; Implants; Mesons; Pulse measurements; Silicon radiation detectors; Spectroscopy; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329335
