Title :
Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes
Author :
Schotanus, P. ; Dorenbos, P. ; Ryzhikov, V.D.
Author_Institution :
Quartz & Silice Holland BV, De Meern, Netherlands
fDate :
8/1/1992 12:00:00 AM
Abstract :
Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with, maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approximately 1.7×104 photons per MeV of absorbed γ-ray energy. The scintillation light can be efficiently detected with silicon photodiodes. Results are presented. Main decay time components of 270 ns and 3.0 μs were measured. The scintillation mechanism and the application of the material are discussed. Some data regarding a similar system, ZnSe(Te), are presented
Keywords :
cadmium compounds; scintillation counters; zinc compounds; CdS(Te); Si photodiodes; ZnSe(Te); absorbed γ-ray energy; microsecond time scale; red emitting crystal; scintillation emission spectrum; single crystals; Conducting materials; Crystalline materials; Optical materials; Photodiodes; Photomultipliers; Photonic crystals; Radiation detectors; Silicon radiation detectors; Solid scintillation detectors; Wavelength measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
