Title :
Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication
Author :
Chen, Wei ; Li, Zheng ; Kraner, H.W.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
Rapid thermal process (RTP) sintering of aluminum metallization has been used in p+-n junction detector fabrication. For the same thickness of aluminum film and at the same RTP sintering condition, the leakage current of the p+-n junction detectors with sputtered Al metallization showed at least a 50% improvement after sintering, and no spiking phenomena were observed compared to the detectors with evaporated Al contacts. RTP sintering in 4% H2/N2 ambient passivates the defects introduced by sputtering and the damage caused by the 60Co irradiation
Keywords :
semiconductor counters; silicon; sintering; 60Co irradiation; Al film thickness; H2/N2 ambient; RTP sintering condition; Si; evaporated Al contacts; leakage current; p+-n junction detector fabrication; rapid thermal process; sintering; spiking phenomena; sputtered Al metallization; sputtered Al/Si contact; Aluminum alloys; Conductivity; Detectors; Leakage current; Metallization; Rapid thermal processing; Semiconductor counters; Silicon alloys; Sputtering; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
