A direct comparison of Ge and Si(Li) detectors in the 2-20 keV range

Author

Rossington, C.S. ; Giauque, R.D. ; Jaklevic, J.M.

Author_Institution

Lawrence Berkeley Lab., California Univ., CA, USA

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

570

Lastpage

576

Abstract

The spectral response of high-purity Ge (HPGe) and lithium-drifted Si (Si(Li)) surface barrier detectors of similar geometry has been measured over a range of X-ray energies under identical experimental conditions. Detector characteristics such as spectral background, escape peak intensity, entrance window absorption, and energy resolution are presented and compared. Although these characteristics have been discussed previously, the authors attempt to consolidate the information by making comparisons under equivalent experimental conditions for the two types of detectors. A primary goal of the study was a comparison of the two types of detectors for use in X-ray fluorescence applications

Keywords

semiconductor counters; Li-drifted Si; Si(Li) detectors; X-ray energies; X-ray fluorescence; energy resolution; entrance window absorption; escape peak intensity; geometry; high-purity Ge; spectral background; spectral response; surface barrier detectors; Collimators; Crystals; Electromagnetic wave absorption; Energy measurement; Energy resolution; Face detection; Geometry; Laboratories; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159667

Filename

159667