• DocumentCode
    833018
  • Title

    A high-speed InGaAsP/InP DFB laser with an air-bridge contact configuration

  • Author

    Chen, T.R. ; Chen, P.C. ; Gee, C. ; Bar-Chaim, N.

  • Author_Institution
    Ortel Corp., Alhambra, CA, USA
  • Volume
    5
  • Issue
    1
  • fYear
    1993
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    High-speed modulation with flat frequency response has been realized in an InGaAsP/InP DFB laser at 1.3- mu wavelength. The laser design uses an isolated narrow mesa and a novel air-bridge contact configuration. A direction current modulation bandwidth in excess of 17 GHz was measured.<>
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; metallisation; optical modulation; semiconductor lasers; 1.3 micron; 17 GHz; InGaAsP-InP; InGaAsP/InP DFB laser; air-bridge contact configuration; direction current modulation bandwidth; flat frequency response; high speed modulation; isolated narrow mesa; laser design; thick Au metallisation; Bandwidth; Fiber lasers; Frequency response; Indium phosphide; Laser feedback; Masers; Power generation; Power lasers; Resonance; Resonant frequency;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.185041
  • Filename
    185041