DocumentCode :
833019
Title :
Suppressing electroabsorption with intra-step-barrier quantum wells for high-power electroabsorption modulators
Author :
Shin, D.S. ; Chen, W.X. ; Zhuang, Y. ; Wu, Y. ; Pappert, S.A. ; Chow, D. ; Yap, D. ; Deelman, P. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume :
38
Issue :
19
fYear :
2002
fDate :
9/12/2002 12:00:00 AM
Firstpage :
1140
Lastpage :
1142
Abstract :
Asymmetric intra-step-barrier quantum wells (IQWs) are examined to show that an electric field directed from the deeper well to the step barrier can produce suppression in electroabsorption. The IQW electroabsorption modulator is shown experimentally to delay electroabsorption up to ~2.5 V. Preliminary optical saturation measurement of the modulator indicates that the RF link gain does not saturate up to ~12 dBm optical power
Keywords :
electric fields; electro-optical modulation; electroabsorption; optical communication equipment; quantum well devices; semiconductor quantum wells; 2.5 V; RF link gain; asymmetric intra-step-barrier quantum wells; clectroabsorption suppression; electric field; high-power electroabsorption modulators; optical saturation measurement;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020718
Filename :
1038640
Link To Document :
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