High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source

Author

Wakita, Koichi ; Kotaka, Isamu ; Asai, Hiromitsu ; Okamoto, Minoru ; Kondo, Yasuhiro ; Naganuma, Mitsuru

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

4

Issue

1

fYear

1992

Firstpage

16

Lastpage

18

Abstract

Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs/InAlAs MQW intensity modulator is demonstrated. A 3-dB bandwidth. in excess of 16 GHz and low-drive-voltage operation (4.0 V) for a 20-dB on-off ratio are obtained. Good coupling efficiency between an MQW DFB laser and an MQW modulator is accomplished using hybrid crystal growth of MO-VPE and MBE.<>

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical devices; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 4.0 V; III-V semiconductor; InGaAs-InAlAs; InGaAsP-InGaAs; MBE; MO-VPE; MQW DFB laser; bandwidth; coupling efficiency; high-speed InGaAs/InAlAs MQW intensity modulator; hybrid crystal growth; monolithic integration; on-off ratio; Bandwidth; Dry etching; Indium gallium arsenide; Intensity modulation; Light sources; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical modulation; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124860

Filename

124860