Monolithic fabrication of strain-free (Al,Ga)As heterostructure lasers on silicon substrates

Author

Burns, Geoffrey F. ; Fonstad, Clifton G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

4

Issue

1

fYear

1992

Firstpage

18

Lastpage

21

Abstract

The first strain-free (Al,Ga)As heterostructure lasers fabricated monolithically on silicon substrates are presented. Residual thermal strain, following molecular beam epitaxial growth, was relieved by chemically separating patterned laser device layers from their substrates. Held in their original location the layers readhered, forming a bond sufficiently robust for subsequent device processing. Strain relief is ascertained through analysis of emission polarization of broad-area double-heterostructure lasers.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; AlGaAs-Si; DH laser; III-V semiconductor; Si substrate; bond; broad-area double-heterostructure lasers; chemical separation; emission polarization; molecular beam epitaxial growth; monolithic fabrication; patterned laser device layers; readhesion; residual thermal strain; strain free (AlGa)As heterostructure laser; Capacitive sensors; Chemical lasers; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical device fabrication; Optical modulation; Quantum well lasers; Silicon; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124861

Filename

124861