Title :
Monolithic fabrication of strain-free (Al,Ga)As heterostructure lasers on silicon substrates
Author :
Burns, Geoffrey F. ; Fonstad, Clifton G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The first strain-free (Al,Ga)As heterostructure lasers fabricated monolithically on silicon substrates are presented. Residual thermal strain, following molecular beam epitaxial growth, was relieved by chemically separating patterned laser device layers from their substrates. Held in their original location the layers readhered, forming a bond sufficiently robust for subsequent device processing. Strain relief is ascertained through analysis of emission polarization of broad-area double-heterostructure lasers.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; AlGaAs-Si; DH laser; III-V semiconductor; Si substrate; bond; broad-area double-heterostructure lasers; chemical separation; emission polarization; molecular beam epitaxial growth; monolithic fabrication; patterned laser device layers; readhesion; residual thermal strain; strain free (AlGa)As heterostructure laser; Capacitive sensors; Chemical lasers; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical device fabrication; Optical modulation; Quantum well lasers; Silicon; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
