• DocumentCode
    833044
  • Title

    Cd1-xZnxTe gamma ray detectors

  • Author

    Butler, J.F. ; Lingren, C.L. ; Doty, F.P.

  • Author_Institution
    Aurora Technologies Corp., San Diego, CA, USA
  • Volume
    39
  • Issue
    4
  • fYear
    1992
  • fDate
    8/1/1992 12:00:00 AM
  • Firstpage
    605
  • Lastpage
    609
  • Abstract
    The results of an effort to improve the performance at CdTe detectors by addressing starting element purity and crystallinity are described. Structural perfection was improved by alloying with ZnTe to form crystals of Cd1-xZnxTe. Crystals were grown by a high-pressure Bridgman method. Evidence for significant enhancements of the μτ products resulting from these efforts is presented. Features of Cd0.8Zn0.2Te detectors include: energy resolutions at 122 keV<7%; resistivity approximately 1011 ohm-cm; no polarization effects: and temperature for useful operation up to 100°C. The large sizes and excellent homogeneity of the crystals make it possible to produce detectors and imaging arrays with areas of several square inches
  • Keywords
    gamma-ray detection and measurement; semiconductor counters; Cd1-xZnxTe gamma ray detectors; CdTe detectors; crystallinity; excellent homogeneity; high-pressure Bridgman method; imaging arrays; polarization; starting element purity; Alloying; Conductivity; Crystallization; Crystals; Detectors; Energy resolution; Polarization; Tellurium; Temperature; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.159673
  • Filename
    159673