Film-level hybrid integration of AlGaAs laser diode with glass waveguide on Si substrate

Author

Yanagisawa, Masahiro ; Terui, Hiroshi ; Shuto, Keizou ; Miya, Tetsuo ; Kobayashi, Morio

Author_Institution

NTT Opto-electron. Lab., Ibaraki, Japan

Volume

4

Issue

1

fYear

1992

Firstpage

21

Lastpage

23

Abstract

A ridge-waveguide AlGaAs laser diode (LD) was integrated with a SiO/sub 2/-Ta/sub 2/O/sub 5/ embedded waveguide on a Si substrate by using a film-level hybrid integration technique of semiconductor epitaxial film. CW operation of the LD was achieved at room temperature. The LD-waveguide butt-coupling loss was 9 dB, and the loss due to misalignment was estimated at 3 dB, which corresponds to a displacement of about 1 mu m in both the vertical and lateral directions.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; optical waveguides; semiconductor junction lasers; 3 dB; 9 dB; AlGaAs laser diode; AlGaAs-SiO/sub 2/Ta/sub 2/O/sub 5/-Si; CW operation; LD-waveguide butt-coupling loss; Si substrate; SiO/sub 2/-Ta/sub 2/O/sub 5/ embedded waveguide; film level hybrid integration; glass waveguide; misalignment; ridge-waveguide AlGaAs laser diode; room temperature; semiconductor epitaxial film; Bonding; Circuits; Diode lasers; Etching; Glass; Optical films; Optical waveguides; Semiconductor films; Semiconductor waveguides; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124862

Filename

124862