Precise determination of turning mirror loss using GaAs/AlGaAs lasers with up to ten 90 degrees intracavity turning mirrors

Author

Johnson, John E. ; Tang, C.L.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

4

Issue

1

fYear

1992

Firstpage

24

Lastpage

26

Abstract

The authors report the fabrication and testing of GaAs/AlGaAs ridge-waveguide lasers with two, six, and ten 90 degrees intracavity turning mirrors using temperature-controlled chemically assisted ion beam etching. By measuring the laser threshold current as a function of the number of mirrors over an entire 1-cm/sup 2/ wafer, the authors make a very reliable estimate of the average single-pass turning mirror loss of 1.16+or-0.14 dB/mirror. Comparison with theory shows that the etched facets have a very small RMS surface roughness of less than 150 AA.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; mirrors; optical losses; semiconductor junction lasers; 90 degrees intracavity turning mirrors; GaAs-AlGaAs; GaAs/AlGaAs lasers; III-V semiconductor; RMS surface roughness; etched facets; fabrication; laser threshold current; ridge-waveguide lasers; temperature-controlled chemically assisted ion beam etching; testing; turning mirror loss; Chemical lasers; Current measurement; Etching; Gallium arsenide; Ion beams; Loss measurement; Mirrors; Optical device fabrication; Testing; Turning;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124863

Filename

124863