Efficient electrooptic modulator in InGaAlAs/InP optical waveguides

Author

Han, Sang-Kook ; Ramaswamy, Ramu V. ; Li, W.-Q. ; Bhattacharya, P.K.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

5

Issue

1

fYear

1993

Firstpage

46

Lastpage

49

Abstract

A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of the QEO coefficient from the measurements is 3.7*10/sup -19/ m/sup 2//V/sup 2/ at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2*10/sup -12/ m/V, which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm, which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8 degrees /V mm for TE and TM polarizations, respectively. These values are the largest reported so far in an InGaAlAs system.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical losses; optical modulation; optical waveguides; 1.5 to 1.7 dB; III-V semiconductor; InGaAlAs-InP; TE polarizations; TM polarizations; efficient electrooptic modulator; linear electrooptic effect; optical waveguides; phase shifts; propagation loss; quadratic electrooptic effect; single heterostructure InGaAlAs/InP phase modulator; single mode ridge waveguide; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Indium phosphide; Low earth orbit satellites; Optical modulation; Optical waveguides; Phase modulation; Propagation losses;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.185056

Filename

185056