A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

Author

Gerber, D.S. ; Droopad, R. ; Maracas, G.N.

Author_Institution

Center for Solid State Eng. Res., Arizona State Univ., Tempe, AZ, USA

Volume

5

Issue

1

fYear

1993

Firstpage

55

Lastpage

58

Abstract

Performance results for a normally on, electroabsorptive, surface-normal Fabry-Perot reflection modulator are presented. The device employs a cavity with a 100 AA GaAs/100 AA Al/sub 0.3/Ga/sub 0.7/As multiple quantum well and top and bottom quarter-wave mirrors with 4 and 19.5 periods, respectively. Very low values of off-state reflectance were measured, giving a maximum contrast ratio >1000 (30 dB) and a maximum reflectance difference of 64.3%. The contrast ratio is, to the authors´ knowledge, the largest reported to date.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; mirrors; reflectivity; semiconductor quantum wells; 100 AA; GaAs-Al/sub 0.3/Ga/sub 0.7/As; GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator; III-V semiconductor; electroabsorptive surface normal modulator; multiple quantum well; off-state reflectance; quarter-wave mirrors; very high contrast ratio; Absorption; Aluminum; Fabry-Perot; Gallium arsenide; Mirrors; Molecular beam epitaxial growth; Quantum well devices; Reflection; Reflectivity; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.185059

Filename

185059