A low-drive-voltage, high-speed monolithic multiple-quantum-well modulator/DFB laser light source

Author

Kotaka, Isamu ; Wakita, Koichi ; Okamoto, Minoru ; Asai, Hiromitsu ; Kondo, Yasuhiro

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

5

Issue

1

fYear

1993

Firstpage

61

Lastpage

63

Abstract

A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device operated stably in a single mode and with a side-mode suppression ratio of more than 50 dB.<>

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical devices; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 2.0 V; III-V semiconductor; InGaAs-InAlAs; InGaAs-InAlAs MQW intensity modulator; InGaAsP-InGaAs; InGaAsP-InGaAs MQW DFB laser; high-speed monolithic multiple-quantum-well modulator/DFB laser light source; hybrid growth technique; low-drive-voltage; metalorganic vapor phase epitaxy; molecular beam epitaxy; monolithic integration; operating drive voltage; side-mode suppression ratio; single mode; Distributed feedback devices; Indium compounds; Indium gallium arsenide; Intensity modulation; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical modulation; Phase modulation; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.185061

Filename

185061