High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz

Author

Wakita, Koichi ; Kotaka, Isamu ; Asai, Hiromitsu

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

4

Issue

1

fYear

1992

Firstpage

29

Lastpage

31

Abstract

High-speed phase modulation (in the frequency bandwidth of 20 GHz, the highest yet reported for multiple quantum well (MQW) phase modulators) for waveguided InGaAlAs/InAlAs MQW optical modulators is reported. The modulator successfully operates at a long wavelength of 1-55 mu m with a low required voltage for phase shift (V pi =3.8 V), small intensity modulation depth below 1.5 dB, and without any modulation bandwidth degradation up to 20 GHz under high input optical power of 0 dBm in single-mode fiber.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical modulation; phase modulation; semiconductor quantum wells; 1.55 micron; 20 GHz; 3.8 V; III-V semiconductor; InGaAlAs-InAlAs; InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators; bandwidth; high input optical power; high speed phase modulation; phase shift; single-mode fiber; small intensity modulation depth; waveguided InGaAlAs/InAlAs MQW optical modulators; Bandwidth; Frequency; High speed optical techniques; Indium compounds; Intensity modulation; Low voltage; Optical modulation; Optical waveguides; Phase modulation; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124865

Filename

124865