20 dB contrast GaAs/AlGaAs multiple quantum-well nonresonant modulators

Author

Amano, Chikara ; Matsuo, Shinji ; Kurokawa, Takashi ; Iwamura, Hidetoshi

Author_Institution

NTT Opto-electron. Lab., Kanagawa, Japan

Volume

4

Issue

1

fYear

1992

Firstpage

31

Lastpage

33

Abstract

The authors report a successful fabrication of nonresonant GaAs/AlGaAs multiple quantum well (MQW) modulators with a contrast ratio of more than 20 dB and a wide bandwidth of 3 nm. The optical path, as long as 8 mu m, is attained by fabricating a high-purity thick MQW layer with a residual carrier concentration of less than 10/sup 14/ cm/sup -3/ and introducing a high-reflectivity AlAs/AlGaAs quarter-wavelength mirror. The driving wavelengths are located at the absorption edge, resulting in the low-absorption loss.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical modulation; semiconductor quantum wells; 20 dB contrast; AlAs-AlGaAs; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum-well nonresonant modulators; III-V semiconductor; MQW modulator; absorption edge; contrast ratio; driving wavelengths; fabrication; high-purity thick MQW layer; high-reflectivity AlAs/AlGaAs quarter-wavelength mirror; low-absorption loss; optical path; residual carrier concentration; wide bandwidth; Absorption; Bandwidth; Coatings; Gallium arsenide; High speed optical techniques; Mirrors; Optical buffering; Optical modulation; Optical saturation; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124866

Filename

124866