Title :
One-transistor GaAs voltage reference circuit
Author :
Yang, H.C. ; Canfield, P.C. ; Allstot, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
3/30/1989 12:00:00 AM
Abstract :
Reports a one-transistor voltage reference circuit using GaAs depletion MESFET technology. The circuit is suitable for monolithic GaAs A/D and D/A convertors, and achieves a temperature coefficient (TC) of less than 10 p.p.m./ degrees C (parts-per-million per degree Celsius) over a 200 degree temperature range.
Keywords :
III-V semiconductors; analogue-digital conversion; digital-analogue conversion; reference circuits; A/D convertors; D/A convertors; GaAs; depletion MESFET technology; one-transistor voltage reference; temperature coefficient; voltage reference circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890319
