• DocumentCode
    833547
  • Title

    One-transistor GaAs voltage reference circuit

  • Author

    Yang, H.C. ; Canfield, P.C. ; Allstot, David J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
  • Volume
    25
  • Issue
    7
  • fYear
    1989
  • fDate
    3/30/1989 12:00:00 AM
  • Firstpage
    464
  • Lastpage
    465
  • Abstract
    Reports a one-transistor voltage reference circuit using GaAs depletion MESFET technology. The circuit is suitable for monolithic GaAs A/D and D/A convertors, and achieves a temperature coefficient (TC) of less than 10 p.p.m./ degrees C (parts-per-million per degree Celsius) over a 200 degree temperature range.
  • Keywords
    III-V semiconductors; analogue-digital conversion; digital-analogue conversion; reference circuits; A/D convertors; D/A convertors; GaAs; depletion MESFET technology; one-transistor voltage reference; temperature coefficient; voltage reference circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890319
  • Filename
    18517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=833547