A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver

Author

Keterson, A.A. ; Tong, Minh ; Seo, Jong-Wook ; Nummila, Kari ; Morikuni, James J. ; Kang, Sung-Mo ; Adesida, Ilesanmi

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

4

Issue

1

fYear

1992

Firstpage

73

Lastpage

76

Abstract

A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/´s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistor circuits; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; receivers; 66 GHz; AlGaAs-InGaAs-GaAs; MSM photodetectors; active components; common-gate FET active feedback resistor; metal-semiconductor-metal; modulation-doped field-effect transistors; monolithically integrated; pseudomorphic MODFET-based monolithic optoelectronic receiver; semiconductors; two-stage transimpedance amplifier design; Circuit testing; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated optoelectronics; MODFET circuits; Materials testing; System testing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124881

Filename

124881