• DocumentCode
    833717
  • Title

    Measurements of material properties using differential capacitive strain sensors

  • Author

    Chu, Larry L. ; Que, Long ; Gianchandani, Yogesh B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • Volume
    11
  • Issue
    5
  • fYear
    2002
  • fDate
    10/1/2002 12:00:00 AM
  • Firstpage
    489
  • Lastpage
    498
  • Abstract
    This paper describes a laterally deflecting micromachined device that offers high sensitivity and wide dynamic range to electronically monitor the thermal expansion coefficient, tensile and compressive residual strain and Young´s modulus of microstructural materials, as well as the temperature dependence of these properties. The device uses sidewall capacitance between interdigitated tines to sense displacement caused by the release of residual stress in a bent-beam suspension. Electrostatic force is used to obtain load-deflection profiles. The suspensions and tines are arranged such that output is a differential readout, immune to common mode parasitic capacitance. Analytical and numerical modeling results are presented and the device concept is verified by three different fabrication approaches using polysilicon and nickel as structural materials. Measured values of residual strain, thermal expansion and Young´s modulus are very consistent with measurements taken by other approaches and those reported previously. For example, the residual strain in certain electrodeposited Ni structures was tracked from 68.5 microstrain at 23°C to -420 microstrain at 130°C, providing an expansion coefficient of 8.2 ppm/K; the best fit Young´s modulus provided by the device was 115 GPa.
  • Keywords
    Young´s modulus; capacitive sensors; condition monitoring; elastic moduli measurement; internal stresses; micromachining; microsensors; modelling; nickel; silicon; strain sensors; thermal expansion measurement; 23 to 130 C; Ni; Si; Young´s modulus; bent-beam suspension; compressive residual strain; differential capacitive strain sensors; differential readout; displacement sensing; electrodeposited Ni structures; electronic monitoring; electrostatic force; fabrication approaches; high sensitivity; interdigitated tines; laterally deflecting micromachined device; load-deflection profiles; material properties measurements; microstructural materials; polysilicon; properties temperature dependence; residual stress; sidewall capacitance; tensile strain; thermal expansion coefficient; wide dynamic range; Capacitive sensors; Dynamic range; Material properties; Monitoring; Nickel; Parasitic capacitance; Strain measurement; Temperature dependence; Tensile strain; Thermal expansion;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2002.803277
  • Filename
    1038843