Title :
Efficient frequency noise reduction of GaAlAs semiconductor lasers by optical feedback from an external high-finesse resonator
Author :
Li, H. ; Telle, H.R.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, West Germany
fDate :
3/1/1989 12:00:00 AM
Abstract :
The reduction of frequency noise power level of non-antireflection-coated GaAlAs laser diodes by several orders of magnitude using optical feedback from an external high-finesse Fabry-Perot resonator is discussed. Optimum oscillation parameters were derived from a steady-state model. Long-term performance was obtained by electronic feedback phase control.<>
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; feedback; gallium arsenide; laser cavity resonators; semiconductor junction lasers; GaAlAs laser diodes; III-V semiconductors; electronic feedback phase control; external high-finesse Fabry-Perot resonator; external high-finesse resonator; frequency noise power; nonantireflection coated diodes; optical feedback; oscillation parameters; steady-state model; Frequency; Laser feedback; Laser modes; Laser noise; Noise level; Noise reduction; Optical feedback; Optical noise; Semiconductor device noise; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
