Significant resonance characteristic improvements by combined use of thermal annealing and Co electrode in ZnO-based FBARs

Author

Yim, Munhyuk ; Kim, Dong-Hyun ; Chai, Dongkyu ; Yoon, Giwan

Volume

39

Issue

23

fYear

2003

Abstract

Resonance characteristics improvements by the combined use of thermal annealing of the W/SiO₂ Bragg reflectors and Co electrodes in ZnO-based film bulk acoustic resonator (FBAR) devices are presented. Their resonance characteristics could be significantly improved by the thermal annealing particularly at 400°C/30 min. In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics, compared to the use of Al electrodes

Keywords

II-VI semiconductors <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; acoustic resonators <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; annealing <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; bulk acoustic wave devices <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; cobalt <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; electrodes <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; piezoelectric semiconductors <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; semiconductor thin films <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; zinc compounds <combined, of thermal annealing and Co electrode, ZnO-based FBARs, significant reson. charact. improv.>; Bragg reflectors; Co; ZnO; alternately deposited multilayer films; cobalt electrodes; electrode patterns; film bulk acoustic resonator; loss characteristics; resonance characteristic improvements; thermal annealing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031029

Filename

1248951