Title :
New selective anodization process for Nb Josephson junction with AlOx barrier
Author :
Morohashi, Shin´ichi ; Ikuta, Michiaki ; Miyoshi, Tatsuya ; Matsumoto, Daiki ; Ariyoshi, Seiichiro ; Ukibe, Masahiro ; Ohkubo, Masataka ; Matsuo, Hiroshi
Author_Institution :
Dept. of Adv. Mater. Sci. & Eng., Fac. of Eng. Yamaguchi Univ., Ube, Japan
fDate :
6/1/2005 12:00:00 AM
Abstract :
One of the most important factor of the superconducting tunnel junction for a particle and radiation detection is the sub-gap leakage current. An anodization of a junction edge is an effective method to reduce the sub-gap leakage current. In a new fabrication process of a Nb/Al-AlOx-Al/Nb junction, the sputtered Al2O3 layers with 10 nm thickness are used as not only the protection layer for the upper surface of both the base and counter electrodes in the anodization process, but also the etching stop layer for the formation of the contact hole by reactive ion etching process.
Keywords :
aluminium compounds; anodisation; leakage currents; niobium; sputter etching; sputtered coatings; superconducting junction devices; superconducting particle detectors; 10 nm; Al2O3; Josephson junction; Nb-Al-AlOx-Al-Nb; particle detection; radiation detection; reactive ion etching process; selective anodization process; sputtering; sub gap leakage current reduction; superconducting tunnel junction; Fabrication; Josephson junctions; Leakage current; Niobium; Plasma accelerators; Plasma applications; Plasma confinement; Radiation detectors; Sputter etching; Sputtering; Anodization; Nb/Al-AlOx-Al/Nb junction; detector; facing target sputtering;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.849703