DocumentCode :
833882
Title :
Structural testing of the HYPRES niobium process
Author :
Joseph, Arun A. ; Sese, Javier ; Flokstra, Jaap ; Kerkhoff, Hans G.
Author_Institution :
Testable Design & Testing of Nanosyst. Group, Univ. of Twente, Enschede, Netherlands
Volume :
15
Issue :
2
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
106
Lastpage :
109
Abstract :
The HYPRES 3.0 μm niobium (Nb) process has proven to be capable of realizing complex low temperature superconductor (LTS) rapid single flux quantum (RSFQ) circuits. In such a mature fabrication process, the importance of the detection of random defects is crucial as they contribute to the majority of the defects occurring while processing the chips. The global low yield in superconductor electronics (SCE) is due to the fact that little is known about the defects and fault mechanisms occurring in Nb technology. This is, however, of crucial importance in realizing the required complex systems with yields required for commercial production. For this purpose, a structural testing approach has been applied to the HYPRES Nb process. As a result, we have developed test structures for the detection of random defects in the process. Test chips were realized in the process and measurements were carried out. Test results on the processed chips leading to defect statistics in the HYPRES Nb process are presented in this paper.
Keywords :
integrated circuit testing; integrated circuit yield; niobium; superconducting integrated circuits; HYPRES niobium process; Nb; defect statistics; low temperature superconductor devices; random defect detection; rapid single flux quantum circuits; structural testing; superconductor electronics; test structures; Circuit testing; Critical current density; Electronic equipment testing; Electronics industry; Fabrication; Integrated circuit yield; Manufacturing processes; Nanotechnology; Niobium; Temperature; LTS devices; RSFQ circuit testing; structural testing; superconductor electronics;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2005.849705
Filename :
1439587
Link To Document :
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