DocumentCode
833882
Title
Structural testing of the HYPRES niobium process
Author
Joseph, Arun A. ; Sese, Javier ; Flokstra, Jaap ; Kerkhoff, Hans G.
Author_Institution
Testable Design & Testing of Nanosyst. Group, Univ. of Twente, Enschede, Netherlands
Volume
15
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
106
Lastpage
109
Abstract
The HYPRES 3.0 μm niobium (Nb) process has proven to be capable of realizing complex low temperature superconductor (LTS) rapid single flux quantum (RSFQ) circuits. In such a mature fabrication process, the importance of the detection of random defects is crucial as they contribute to the majority of the defects occurring while processing the chips. The global low yield in superconductor electronics (SCE) is due to the fact that little is known about the defects and fault mechanisms occurring in Nb technology. This is, however, of crucial importance in realizing the required complex systems with yields required for commercial production. For this purpose, a structural testing approach has been applied to the HYPRES Nb process. As a result, we have developed test structures for the detection of random defects in the process. Test chips were realized in the process and measurements were carried out. Test results on the processed chips leading to defect statistics in the HYPRES Nb process are presented in this paper.
Keywords
integrated circuit testing; integrated circuit yield; niobium; superconducting integrated circuits; HYPRES niobium process; Nb; defect statistics; low temperature superconductor devices; random defect detection; rapid single flux quantum circuits; structural testing; superconductor electronics; test structures; Circuit testing; Critical current density; Electronic equipment testing; Electronics industry; Fabrication; Integrated circuit yield; Manufacturing processes; Nanotechnology; Niobium; Temperature; LTS devices; RSFQ circuit testing; structural testing; superconductor electronics;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2005.849705
Filename
1439587
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