Five-contact silicon structure based integrated 3D Hall sensor

Author

Roumenin, Ch.S. ; Nikolov, D.I.

Volume

39

Issue

23

fYear

2003

Abstract

A new silicon integrated 3D Hall sensor for high-accuracy magnetic field measurements is suggested and tested. Its unique device design in having only five n⁺ contacts allows simultaneous and independent obtaining of the full information about the three components of the magnetic field vector. The device is manufactured through a simple planar process and requires the use of four masks. The lateral dimensions of the sensor are 270×270 μm; the channel magnetosensitivities are S_x=S_y=85 V/AT and S_z=29 V/AT; the nonlinearity and channel cross-sensitivities at B≤1 reach no more than 0.6% and 3-4%, respectively; and the frequency response to AC magnetic field is greater than 30 kHz

Keywords

elemental semiconductors <5-contact Si struct. integr. 3D Hall sens.>; magnetic field measurement <5-contact Si struct. integr. 3D Hall sens.>; magnetic sensors <5-contact Si struct. integr. 3D Hall sens.>; magnetometers <5-contact Si struct. integr. 3D Hall sens.>; microsensors <5-contact Si struct. integr. 3D Hall sens.>; silicon <5-contact Si struct. integr. 3D Hall sens.>; 3D vector magnetometer; Hall microsensor; Si; channel cross-sensitivities; channel magnetosensitivities; five-contact silicon structure; high-accuracy measurements; integrated 3D Hall sensor; magnetic field measurements; magnetic field vector; planar process;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031075

Filename

1248960