Effect of ion implantation induced defects on optical attenuation in silicon waveguides

Author

Knights, A.P. ; Hopper, G.F.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

39

Issue

23

fYear

2003

Abstract

The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm^-1 for a dose of 1×10¹⁴ cm^-2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies

Keywords

annealing <ion implant. induced defects, opt. atten., Si waveguides, effect>; ion beam effects <implant. induced defects, opt. atten., Si waveguides, effect>; ion implantation <induced defects, opt. atten., Si waveguides, effect>; light absorption <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical attenuators <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical fabrication <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical planar waveguides <ion implant. induced defects, opt. atten., Si waveguides, effect>; silicon-on-insulator <ion implant. induced defects, opt. atten., Si waveguides, effect>; vacancies (crystal) <ion implant. induced defects, opt. atten., Si waveguides, effect>; SOI; Si; annealing temperature; buried oxide layer; divacancies; infrared absorption; ion implantation induced defects; optical attenuation; optical loss; planar lightwave circuits; ridge waveguides; self-ion implantation; silicon waveguides; thermal stability;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031036

Filename

1248961