Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm-1 for a dose of 1×1014 cm-2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies
Keywords :
annealing <ion implant. induced defects, opt. atten., Si waveguides, effect>; ion beam effects <implant. induced defects, opt. atten., Si waveguides, effect>; ion implantation <induced defects, opt. atten., Si waveguides, effect>; light absorption <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical attenuators <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical fabrication <ion implant. induced defects, opt. atten., Si waveguides, effect>; optical planar waveguides <ion implant. induced defects, opt. atten., Si waveguides, effect>; silicon-on-insulator <ion implant. induced defects, opt. atten., Si waveguides, effect>; vacancies (crystal) <ion implant. induced defects, opt. atten., Si waveguides, effect>; SOI; Si; annealing temperature; buried oxide layer; divacancies; infrared absorption; ion implantation induced defects; optical attenuation; optical loss; planar lightwave circuits; ridge waveguides; self-ion implantation; silicon waveguides; thermal stability;
