• DocumentCode
    833949
  • Title

    Gamma Irradiation Insensitivity of GaAs Schottky Diodes

  • Author

    Ashok, S. ; Borrego, J.M. ; Gutmann, R.J.

  • Author_Institution
    Electrical and Systems Engineering Department Rensselaer Polytechnic Institute Troy, New York 12181
  • Volume
    25
  • Issue
    2
  • fYear
    1978
  • fDate
    4/1/1978 12:00:00 AM
  • Firstpage
    999
  • Lastpage
    1000
  • Abstract
    Guarded Al-and Au-nGaAs Schottky barrier diodes were subjected to Co60 ¿-ray irradiation and their electrical characteristics evaluated. These GaAs Schottkys did not exhibit significant change in their I-V and C-V characteristics up to an absorbed dose as high as 1.5 × 107 rads. Diodes that were previously neutron-irradiated with consequent degradation were also subjected to Co60 irradiation, but no synergistic changes were observed.
  • Keywords
    Capacitance-voltage characteristics; Degradation; Electric variables; Gallium arsenide; Gold; Ionizing radiation; Metallization; Schottky barriers; Schottky diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329446
  • Filename
    4329446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=833949