Title :
Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate
Author :
Chriqui, Y. ; Saint-Girons, G. ; Bouchoule, S. ; Moison, J.-M. ; Isella, G. ; von Kaenel, H. ; Sagnes, I.
Author_Institution :
Lab. de Photonique et de Nanostructures L.P.N., Marcoussis, France
Abstract :
Th first successful realisation of MOVPE grown strained InGaAs/GaAs long-wavelength quantum well (QW) laser structures integrated on Si substrates via strained relaxed Ge/GeSi buffer layers is reported. Room temperature (RT) operation at an emission wavelength of 1.04 μm was obtained from broad area devices. Identical control laser diodes grown on bulk germanium substrates showed similar threshold current density, demonstrating the potential of Ge/Si-virtual substrate (VS) for monolithic integration of long-wavelength GaAs-based lasers on Si.
Keywords :
III-V semiconductors; MOCVD; atomic layer epitaxial growth; gallium arsenide; indium compounds; optical interconnections; quantum well lasers; 1.04 micron; InGaAs-GaAs; LE-PECVD virtual substrate; MOCVD; Si; atomic layer epitaxy; broad area devices; long-wavelength laser structures; monolithic integration; optical interconnects; room temperature laser operation; strained quantum well; strained relaxed buffer layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030926
