DocumentCode :
8341
Title :
Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy
Author :
Nazari, Mohammad ; Hancock, Bobby Logan ; Piner, Edwin L. ; Holtz, Mark W.
Author_Institution :
Mater. Sci., Eng., & Commercialization, Texas State Univ., San Marcos, TX, USA
Volume :
62
Issue :
5
fYear :
2015
fDate :
May-15
Firstpage :
1467
Lastpage :
1472
Abstract :
Direct measurements of self-heating in gallium nitride (GaN) transistor using ultraviolet (UV) and visible micro-Raman spectroscopy are reported. The material stack was grown on silicon substrates and consists of an AlN nucleation, AlGaN transition, GaN buffer, and AlGaN barrier layers. Phonon shifts are used to estimate the temperature rise. UV measurements probe the current-carrying 2-D electron gas (2-DEG) in the GaN near the interface with the barrier region. Visible micro-Raman measurements provide an average temperature rise through GaN, AlN, and substrate near its interface with AlN. Together, these measurements provide a temperature depth profile. Under identical drive conditions, the increase in temperature from UV micro-Raman is approximately twice what is obtained from the visible measurements, reaching as high as 350°C above ambient temperature at input power of 7.8 W/mm. The temperature depth profile is simulated using finite-element analysis. We find that the temperature dependence of the thermal conductivity of GaN is important to incorporate in these simulations due to the large temperature rise in the 2-DEG region. A thermal boundary resistance of 1× 10-8~K·m2 /W is obtained from the combined simulation and experimental results.
Keywords :
III-V semiconductors; Raman spectroscopy; aluminium compounds; finite element analysis; gallium compounds; high electron mobility transistors; thermal conductivity; two-dimensional electron gas; wide band gap semiconductors; 2-DEG region; AlGaN-GaN; FEA; HFET; UV measurements; barrier layers; current-carrying 2D electron gas; finite-element analysis; heterojunction field-effect transistor; identical drive conditions; material stack; nucleation; phonon shifts; self-heating profile; temperature dependence; temperature depth profile; temperature rise; thermal boundary resistance; thermal conductivity; ultraviolet micro-Raman spectroscopy; visible measurements; visible micro-Raman spectroscopy; Aluminum gallium nitride; Gallium nitride; HEMTs; III-V semiconductor materials; Silicon; Substrates; Temperature measurement; Field-effect transistors; HEMTs; Raman scattering; temperature measurement; thermal analysis; thermal resistance; thermal resistance.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2414718
Filename :
7073617
Link To Document :
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