Title :
Fabrication and characterization of NbN/AlN/NbN junction on MgO(001) and AlN/NbN bilayer on MgO(111) substrates
Author :
Wu, P.H. ; Kang, L. ; Chen, Y.J. ; Sun, J. ; Chen, J. ; Zhao, S.Q.
Author_Institution :
Dept. of Electron. Sci. & Eng., Nanjing Univ., China
fDate :
6/1/2005 12:00:00 AM
Abstract :
Using direct current (DC) or radio frequency (RF) magnetron sputtering techniques, NbN/AlN/NbN junctions or AlN/NbN bilayers are prepared on single crystal MgO [001] or MgO (111) substrates respectively, both at ambient substrate temperatures. The crystalline structures of such multilayers are characterized layer-by-layer using X-ray diffraction and transmission electron microscopy (TEM). Interestingly, the AlN barrier in NbN/AlN/NbN/ MgO [001] is amorphous while the NbN/AlN/NbN/MgO (111) is single-crystalline with [001] orientation. The electrical properties of these two structures are compared. Also discussed are the DC and high frequency behavior of NbN/AlN/NbN/ MgO [001] junction.
Keywords :
X-ray diffraction; aluminium compounds; magnesium compounds; multilayers; niobium compounds; sputtered coatings; superconducting thin films; superconductor-insulator-superconductor devices; transmission electron microscopy; DC behavior; MgO (111) substrates; NbN-AlN-NbN; X-ray diffraction; crystalline structure; direct current magnetron sputtering techniques; electrical property; high frequency behavior; multilayers; radio frequency magnetron sputtering techniques; single crystal MgO [001]; thin film; transmission electron microscopy; Amorphous magnetic materials; Amorphous materials; Crystallization; Fabrication; Magnetic multilayers; Radio frequency; Sputtering; Temperature; Transmission electron microscopy; X-ray diffraction; Crystalline structure; NbN; SIS junction; thin film;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.849756
