Title :
1-GHz GaAs ADC building blocks
Author :
Thomas, Francois ; Debrie, Francis ; Gloanec, Maurice ; Le Paih, Michele ; Martin, Philippe ; Nguyen, Thao ; Ruggeri, Stephane ; Uro, Jean-Marie
Author_Institution :
Thomson Composants Microondes, Orsay, France
fDate :
4/1/1989 12:00:00 AM
Abstract :
GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridge and FET-switch S/Hs have been compared. Best performances have been achieved with diode-bridge switches: 1 ns and 6 bits. Comparators provide 6-b sensitivity at 1 GHz, but require offset adjustments. Second-generation analog-to-digital converter (ADC) building blocks have been made. Performances and applications of resulting circuits as well as advanced ADC design criteria are discussed, with special attention to yield. First results on a 4-b ADC are presented.<>
Keywords :
III-V semiconductors; analogue-digital conversion; field effect integrated circuits; gallium arsenide; integrated circuit technology; sample and hold circuits; 1 GHz; 1 ns; ADC building blocks; ADC design criteria; FET-switch; GaAs; S/H circuits; analog-to-digital converter; comparators; data acquisition; diode-bridge switches; low-cost conventional D-MESFET technology; performances; sample and hold circuits; semiconductors; Bridges; Data acquisition; Diodes; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; Metallization; Silicon; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
