1-GHz GaAs ADC building blocks

Author

Thomas, Francois ; Debrie, Francis ; Gloanec, Maurice ; Le Paih, Michele ; Martin, Philippe ; Nguyen, Thao ; Ruggeri, Stephane ; Uro, Jean-Marie

Author_Institution

Thomson Composants Microondes, Orsay, France

Volume

24

Issue

2

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

223

Lastpage

228

Abstract

GaAs ICs for high-speed, 6-b, 1G-sample/s (Gs/s) data acquisition are under development, using a low-cost conventional D-MESFET technology. First-generation sample-and-holds (S/Hs) and comparators are currently being sampled to customers. Diode-bridge and FET-switch S/Hs have been compared. Best performances have been achieved with diode-bridge switches: 1 ns and 6 bits. Comparators provide 6-b sensitivity at 1 GHz, but require offset adjustments. Second-generation analog-to-digital converter (ADC) building blocks have been made. Performances and applications of resulting circuits as well as advanced ADC design criteria are discussed, with special attention to yield. First results on a 4-b ADC are presented.<>

Keywords

III-V semiconductors; analogue-digital conversion; field effect integrated circuits; gallium arsenide; integrated circuit technology; sample and hold circuits; 1 GHz; 1 ns; ADC building blocks; ADC design criteria; FET-switch; GaAs; S/H circuits; analog-to-digital converter; comparators; data acquisition; diode-bridge switches; low-cost conventional D-MESFET technology; performances; sample and hold circuits; semiconductors; Bridges; Data acquisition; Diodes; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; Metallization; Silicon; Switches;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.18580

Filename

18580