• DocumentCode
    834237
  • Title

    Measurement and modelling of power electronic devices at cryogenic temperatures

  • Author

    Forsyth, A.J. ; Yang, S.Y. ; Mawby, P.A. ; Igic, P.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Univ. of Manchester
  • Volume
    153
  • Issue
    5
  • fYear
    2006
  • fDate
    10/1/2006 12:00:00 AM
  • Firstpage
    407
  • Lastpage
    415
  • Abstract
    Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50 K. Full details are presented of the model parameter variations with temperature over the range 50-300 K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures
  • Keywords
    cryogenic electronics; insulated gate bipolar transistors; power semiconductor devices; semiconductor device measurement; semiconductor device models; 50 to 300 K; IGBT model; cryogenic temperatures; power electronic devices; sinusoidal pulse-width-modulated inverter leg;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20050359
  • Filename
    4015848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834237