Title :
Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
Author :
Yamashita, Yoshimi ; Endoh, Akira ; Shinohara, Keisuke ; Hikosaka, Kohki ; Matsui, Toshiaki ; Hiyamizu, Satoshi ; Mimura, Takashi
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We fabricated decananometer-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As high-electron mobility transistors (HEMTs) with a very short gate-channel distance. We obtained a cutoff frequency f/sub T/ of 562 GHz for a 25-nm-gate HEMT. This f/sub T/ is the highest value ever reported for any transistor. The ultrahigh f/sub T/ of our HEMT can be explained by an enhanced electron velocity under the gate, which was a result of reducing the gate-channel distance.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave transistors; 25 nm; 562 GHz; In/sub 0.52/Al/sub 0.48/As-In/sub 0.7/Ga/sub 0.3/As; S-parameter measurements; decananometer-gate pseudomorphic HEMTs; electron velocity profiles; enhanced electron velocity; pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs; submillimeter-wave frequency; two-step-recessed gate; ultrahigh cutoff frequency; very short gate-channel distance; Cutoff frequency; Electron mobility; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Millimeter wave communication; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802667
