S-parameter characterization and modeling of three-terminal semiconductive devices at cryogenic temperatures

Author

Smuk, J.W. ; Stubbs, M.G. ; Wight, J.S.

Author_Institution

Commun. Res. Centre, Ottawa, Ont., Canada

Volume

2

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

111

Lastpage

113

Abstract

Three generations of three-terminal microwave semiconductive devices are measured and analyzed at 297 K and 77 K. FETs, HEMTs, and pseudomorphic-HEMTs (P-HEMTs) are accurately characterized over the frequency range from 1 GHz to 20 GHz using a newly developed split-block test fixture and the through-reflect-line (TRL) calibration technique. Accurate characterization allows small-signal models to be closely fitted at both temperatures. The performance improvement offered by low temperature operation is described.<>

Keywords

S-parameters; Schottky gate field effect transistors; cryogenics; field effect transistors; high electron mobility transistors; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; 1 to 20 GHz; 297 K; 77 K; FET; MESFET; S-parameter characterization; TRL; calibration technique; cryogenic temperatures; low temperature operation; modeling; pseudomorphic-HEMTs; small-signal models; split-block test fixture; three-terminal semiconductive devices; through-reflect-line; Character generation; FETs; Frequency measurement; HEMTs; Microwave devices; Microwave generation; Microwave measurements; Microwave theory and techniques; Scattering parameters; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.124916

Filename

124916